Hydrogen-Terminated Diamond Field-Effect Transistors with 1011 ON/ OFF Ratio Using an Al2O3/HfO2 Stacked Passivation Layer
IEEE TRANSACTIONS ON ELECTRON DEVICES（2024）
关键词
Diamonds,Leakage currents,metal-insulator-semiconductor field-effect transistor (MISFET),ON/OFF ratio,stacked passivation layer
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