Double Modulation Simplified Space Vector PWM for Split Output Three-Level T-Type Inverters
2023 5th International Conference on Power and Energy Technology (ICPET)(2023)
摘要
The use of high-frequency and wide-bandgap semiconductor switching devices further improves the performance of inverters. In this paper, a split-output T-type three-level inverter using SiC MOSFET devices is proposed based on the conventional T-type three-level inverter. The simulation verification shows that the adoption of double-modulation simplified space vector pulsewidth modulation (DMS-SVPWM) can reduce the influence of dead-time on inverter output. It demonstrates that the proposed DMS-SVPWM can significantly improve the output current quality of the split-output T-type three-level inverter.
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关键词
SiC MOSFET,simplified SVPWM,dead-time,DMS-SVPWM
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