Design and Test of S-Band High Power Limiter

With electronic equipment to miniaturization, high-speed, integrated high-speed development, its electromagnetic sensitivity problems are increasingly prominent, and vulnerable to the impact of complex electromagnetic environment and damage. The limiter has the characteristics of small size, simple structure and strong limiter ability, which is widely used in all kinds of RF device protection. In order to enhance the power capacity of the limiter, this paper adopts the combination of TVS and PIN diodes to make a high-power limiter for S-band, which contains two-stage TVS, two-stage PIN diodes and one-stage Schottky diodes, in which microstrip inductors are added to optimize the multi-stage coordination. The test results show that the limiter insertion loss of 2.24dB at the design frequency point, can withstand 75dBm input power and provide 50dB isolation, both high-power capacity and strong limiting performance, the method can provide a reference for limiter power capacity expansion.