Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT.

In this paper, the dynamic drain to source on-state resistance behaviors of a 1.9kV GaN-on-Sapphire HEMT are investigated in details under various conditions. Benefiting from the insulation feature of substrate, the GaN HEMTs fabricated on Sapphire possess ultrahigh breakdown voltage beyond 1.9kV. Meanwhile, the GaN-on-Sapphire device exhibits a lower rate of on-state resistance degradation at both 25°C and 225°C, compared with a GaN-on-Silicon device.