980 nm QW lasers with GaAsP barriers monolithically grown on (001) Si by MOCVD

Jie Huang,Qi Lin,Wei Luo, Wen Gu,Liying Lin,Kei May Lau

2023 IEEE PHOTONICS CONFERENCE, IPC（2023）

引用 0|浏览0

暂无评分

摘要

We report CW lasing of QW lasers grown on Si emitting at 980 nm. Strain-compensated InGaAs/GaAs/GaAsP QW structures were implemented and compared with conventional compressively strained InGaAs/GaAs QWs. Device performance of these two structures grown on Si and GaAs substrates are investigated.

查看译文

关键词

lasers,980 nm,strain-compensated

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要