4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design

M. Schraml, N. Papathanasiou, A. May, M. Rommel,T. Erlbacher

2023 IEEE PHOTONICS CONFERENCE, IPC（2023）

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摘要

The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p(-) and p(+) regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.

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关键词

UV Sensor,VUV,4H-SiC,photodiode,spectral responsivity

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