4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
2023 IEEE PHOTONICS CONFERENCE, IPC(2023)
摘要
The fabrication of a novel Vacuum UV (VUV) sensitive 4H-SiC pin photodiode is presented. Aluminum ion implantation was used to fabricate a patterned emitter structure with p(-) and p(+) regions resulting in the highest reported VUV sensitivity for a SiC pin photodiode.
更多查看译文
关键词
UV Sensor,VUV,4H-SiC,photodiode,spectral responsivity
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要