Growth of Nitrides on Nearly Lattice-Matched Substrate ScAlMgO4 and its Application

Although nitride semiconductors practically used for light-emitting devices and high-frequency and high-power devices, there is no low-cost and large GaN wafer commercially available., the GaN growth on ScAlMgO 4 substrates instead of GaN substrate, which has been expected to be a nearly lattice-matched substrate since the 1990s, is described. Its main points are the growth method of GaN, considering its weak property to a reducing atmosphere. The method preventing the impurity penetration from SCAM into GaN is also explained. As an application of SCAM substrates, a light-emitting-diode fabricated on SCAM substrate is demonstrated.