Impurity-induced enhancement of parity-forbidden optical intracenter transitions of shallow donors in silicon
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(2024)
摘要
Different defects in silicon crystals cause lattice distortion that may violate selection rules for certain intracenter optical transitions of hydrogen-like donor centers. Perturbations due to large concentration of substitutional donors enhance all parity-forbidden atomic transitions, but cause large concentration broadening of the transition lines, prohibiting observation of transitions at close energies. Substitutional residual carbon atoms in silicon induce, in contrast, a weak-to-moderate broadening of donor absorption lines enabling the resolution of some parity-forbidden intracenter transitions in impurity absorption spectra at moderate donor densities. Binding energies of several series of s- and d-type states were obtained by resolving of intracenter transitions terminating in these states, by low-temperature infrared absorption spectroscopy in carbon-rich and/or heavily doped silicon crystals.
更多查看译文
关键词
Substitutional impurity,Silicon,Intracenter transitions
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要