RF Interconnection Design of Bump Bonding with a Dislocation Package Structure towards Electro-Optic Modulation Applications

Bonding technology can be an important component of packaging for photonic chips, such as electro-optic (EO) modulators and other active function devices. In general, an EO modulator chip can achieve a broader 3 dB EO bandwidth than its packaging device, as the packaging design and structure can technically limit modulation performance. Recently, bump bonding has been shown to be a good candidate for the EO interconnection technique, which has a higher transmission bandwidth than wire bonding. In this article, we propose a design for radio frequency (RF) interconnection of bump bonding with a dislocation packaging (BBDP) structure. Through simulation calculations and analysis, the proposed BBDP structure shows a 3 dB transmission bandwidth of approximately 145 GHz, which is 52.6% better than one using optimized wire-bonding structures (95 GHz). The proposed packaging structure presents an important alternative method for ultrahigh speed optical modulation applications.