A Trench Gate Reverse-Conducting IGBT with a Shallow Oxide Trench and a Floating P-Region

A Trench Gate Reverse-Conducting IGBT with a shallow oxide trench and a floating p-region (STFP RC-IGBT) is proposed to suppress the snapback phenomenon during the forward conduction. Take 1700 V RC-IGBT for example, the forward, reverse and short-circuit characteristics are analyzed by simulation. The results show that, compared with the conventional RC-IGBT and TFP RC-IGBT, the snapback-free characteristics can be realized in STFP RC-IGBT by cell size of 32 micrometer. Furthermore, the turn-off energy loss, Eoff, of IGBT and the reverse recovery peak current density, JRM, of diode are the lowest.