Synthesis and Study of High-Performance Ferroelectric Materials for Advanced Non-Volatile Memory Devices
2023 7th International Conference on Information, Control, and Communication Technologies (ICCT)(2023)
摘要
Sol-gel films BaxSrl-xTi03 (x = 0,8; 0, 9; 1) were obtained, the dependences of their properties on the parameters of the sol-gel process were determined. The research results allow us to propose ferroelectric structures for use in DRAM devicesof thin sol-gel films.
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关键词
sol-gel films,AFM,SEM,polarization,DRAM
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