Investigation of the SOI microdosimeter for high LET ion measurements

In this work, a 3D silicon-on-insulator (SOI) microdosimeter was investigated during high LET ion irradiation using a 24 MeV carbon ion microbeam and a 500 MeV/u argon ion therapeutic beam. The results demonstrate the performance of the SOI microdosimeter when measuring high LET particles, with some attributing low energy events observed in the extremely low energy region. However these events did not substantially affect the microdosimetric spectra nor the yD values. This demonstrates that the SOI microdosimeter is suitable for high LET ion QA applications.