Validation of a vacuum-ultraviolet sensitive Single Photon Avalanche Diode prototype for deep-UV applications

The detection of deep ultraviolet light at cryogenic temperatures using silicon photomultipliers (SiPMs) represents a pioneering area of research in dark matter applications that employ noble gases as both targets and detectors. Scintillation light emitted by the noble gas falls within the vacuum ultraviolet (VUV) range, specifically between 100-200nm. To detect this VUV-sensitive wavelength range, a silicon photon avalanche photosensor has been developed on a 160nm Silicon-on-Insulator (SOI) wafer. The first prototype has been fabricated in various configurations, ranging from a single pixel to 2×2 and 4×4 pixels. Different pixel arrangements featuring guard rings and trenches have been investigated. To assess the prototype's electrical behavior, simulations are initially carried out, followed by measurements to evaluate its operational characteristics. The outcome of these measurements will be presented.