Tailoring III-V nanowires’ bandgap on demand for novel single photon sources and quantum emitters *

We provide a new method to largely tune the bandgap of dilute nitrides GaAsN nanowires and InN nanowires by post-growth incorporation of hydrogen atoms in the nanowires lattice. When such control is achieved at the nanoscale, this approach opens fast and effective possibilities for forming novel site-controlled and energy-controlled quantum dots and quantum rings in nanowires, which are valuable components of the toolbox of quantum optics and optoelectronics devices. Moreover, in ultra-thin GaAsN nanowires, we provide evidence for pure single photon emission even in absence of hydrogen irradiation.