Ionic liquid gating of CVD-growth WS2-based field effect transistors

The study of two-dimensional (2D) materials has gained significant attention due to their potential use in electronic, spintronic, and optoelectronics applications. Transition metal dichalcogenides (TMDs)[1], a type of 2D material, are particularly interesting because they have a bandgap that changes from indirect to direct as their thickness decreases from bulk to monolayer[2]. Tungsten disulphide (WS 2 )[3] is of particular interest due to its direct bandgap in the visible range, making it suitable for electronics and optoelectronics applications. Therefore, it is important to control the growth process to obtain high-quality WS 2 with desirable electronic and optical properties using chemical vapor deposition (CVD) growth for mass production of commercial devices.