Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on g m and f T
IEEE Electron Device Letters（2023）
摘要
Bias-dependent electron velocity ( v e ) was extracted from AlGaN/GaN HFETs with different gate lengths ( L g ) by S-parameter measurement. A peak v e was observed at a channel electron density ( n s ) of 3.5 × 10 12 cm -2 in a 0.25 μm L g HFET. This v e behavior can explain the extrinsic transconductance ( g m ) and current gain cutoff frequency ( f T ) in different L g AlGaN/GaN HFETs with different V gs based on time delay methods and drift-diffusion solver coupled to Monte Carlo (MC) simulation. As L g is scaled down from 0.5 μm to 0.25 μm, the device exhibits largely increased g m and f T . The better g m is related to the increased v e by the enhanced electric field ( E ) and the increased positive Δ v e /Δ V gs by the enhanced polarization Coulomb field (PCF) scattering in the short- L g device. The better f T is related to the increased v e , g m , and decreased gate-source capacitance ( C gs ). These results highlight Δ v e /Δ V gs as a vital parameter to effectively modulate the device performances of GaN HFETs.
更多查看译文
关键词
algan/gan hfets,bias-dependent
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要