Electron Beam Induced Current Study of Photocurrent Gain in κ-Ga2O3 Schottky Diodes
ECS Journal of Solid State Science and Technology(2023)
Abstract
The κ -Ga 2 O 3 polytype is attracting attention because of its high spontaneous electric polarization, which exceeds that of III-Nitrides. However, little is known of its transport and photoconductive properties. The electron beam induced current gain effect in Schottky barriers prepared on thick films of κ -Ga 2 O 3 has been studied. It is shown that the gain originates in the depletion region of the Schottky barrier. It is demonstrated that the induced current gain takes place only in some local regions, several which increases with applied bias. Such unusual behavior can be explained by an inhomogeneous distribution of hole traps or by a formation of conductive channels under applied bias.
MoreTranslated text
Key words
photocurrent gain,schottky diodes,electron,current
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined