Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process
Applied Physics Express(2023)
Abstract
In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, for the first time, GaN Camel diodes with improved barrier height and turn-on voltage were realized compared to regular GaN Schottky barrier diodes. Temperature-dependent current-voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN-based unipolar diodes.
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Key words
GaN,Camel diode,diffusion,Schottky diode,barrier height
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