Ga-polar GaN Camel diode enabled by a low-cost Mg-diffusion process

In this letter, we show that low-cost physical vapor deposition of Mg followed by a thermal diffusion annealing process increases the effective barrier height at the metal/Ga-polar GaN Schottky interface. Thus, for the first time, GaN Camel diodes with improved barrier height and turn-on voltage were realized compared to regular GaN Schottky barrier diodes. Temperature-dependent current-voltage characteristics indicated a near-homogeneous and near-ideal behavior of the GaN Camel diode. The analysis performed in this work is thought to be promising for improving the performance of future GaN-based unipolar diodes.