Compact Modeling of LDMOS Transistors Over a Wide Temperature Range Including Cryogenics
IEEE TRANSACTIONS ON ELECTRON DEVICES(2024)
摘要
An improved compact model of high-voltage laterally diffused MOS (LDMOS) transistors valid over a wide temperature range including cryogenic is presented. The existing BSIM-BULK HV compact model is improved to include carrier freeze-out and field-assisted ionization models, which are key for the HV devices. In addition, temperature dependence of mobility, flat-band voltage, and saturation velocity models are also improved for application to cryogenic temperatures. The proposed model is implemented within the framework of the BSIM-BULK HV compact model and shows excellent capability in modeling experimental LDMOS transistor data for temperatures between 300 and 77 K.
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关键词
BSIM-BULK,carrier freeze-out,complementary metal-oxide-semiconductor (CMOS),cryogenic,laterally diffused MOS (LDMOS),semiconductor device modeling
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