Homogeneous in-plane WSe2 P–N junctions for advanced optoelectronic devices
Nanoscale(2023)
摘要
Through selective plasma doping, the in situ construction of homogeneous lateral WSe 2 P–N junctions within a single WSe 2 flake is achieved. Our device shows an external quantum efficiency of ∼228% and a high photoresponsivity of ∼7.1 × 10 4 mA W −1 .
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关键词
junctions,in-plane
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