(Invited) Wide Bandgap Semiconductor Based Devices for Digital and Industrial Applications

Qin Wang,Ashutosh Kumar, Martin Berg, Olof Öberg,Mietek Bakowski, Jang‐Kwon Lim, Hithiksha Krishna Murthy,Konstantin Kostov,Saeed Akbari,Michael Salter,Peter Ramvall

ECS transactions(2023)

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摘要
Wide bandgap (WBG) semiconductor devices based on SiC, GaN and Ga 2 O 3 provide advantages for many strategic initiatives in various industrial sectors, such as data centers, electric vehicles, renewable energy systems like solar and wind power inverters. Here we provide an overview of our ongoing WBG semiconductor related research/development and innovation activities, especially on GaN based devices owing to their rapid/huge demanding in the emerging green technology market nowadays. In particular, the innovative GaN material epi growth, the device processing/packaging and related characterization/verification are elaborated.
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semiconductor
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