Investigation of Phase Transition and Ultrawide Band Gap Engineering in MgGaO Semiconductor Thin Films
ACS applied optical materials(2023)
Abstract
Magnesium gallium oxide (MgGaO) ternary alloys with band gap energy larger than ∼5.0 eV can provide opportunities for optoelectronics in the deep ultraviolet spectral range and power electronics with extremely high critical field strength. It is important to grow high-quality MgGaO alloys with varied Mg compositions and understand their structural and optical properties. From this perspective, 20 MgGaO samples with Mg atomic percentages from 0 to 100% were grown by using oxygen plasma-assisted molecular beam epitaxy. Band gap tuning from 5.03 to 5.89 eV was achieved for the ternary alloys, and all samples had a transmittance of over ∼90% in the visible spectral range. The lattice structures were confirmed to transform from the β phase in Ga-rich materials to the β and rocksalt mixture phase in high-Ga high-Mg alloys and to the pure rocksalt phase in Mg-rich alloys. How lattice parameters change with the increase of Mg atom % and the epitaxy relationship between MgGaO films and c-sapphire substrates were revealed.
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