P‐10.11: Pixelation of Nano‐LED arrays with high effective light‐emitting area ratio by ion injection: A Simulation study

The etch damage caused by the conventional bench-top etching process makes it difficult to produce Nano-LED devices. Recently, some scholars have studied the use of ion injection to achieve electrical isolation between pixels for the purpose of pixelation. In this paper, we focus on the distribution characteristics of ions in GaN targets to improve the effective light-emitting area ratio of devices by reducing the lateral diffusion effect of ions.