Effect of Ar gas on the physical properties of Cadmium Sulfide diode prepared by PL deposition

Abstract Cadmium sulfide (CdS) thin films were created using the pulse laser ablation technique and were applied to glass using varying pressure of argon gas (10, 20, and 30 torr). Characterized by X-ray diffraction and (scanning electron microscopy (SEM) and atomic force microscopy (AFM)) were studyed, additionally with various Ar gas pressures onelectrical characteristics are studied. The polycrystalline hexagonal structure of CdS films is demonstrated by X-ray diffraction analysis. To calculate the grain size of partical of deposited films which found the grain size ranges from (34-80) nm. Surface morphology measured using AFM give a spherical like structure and the average roughness was in the range of (6.45-11.49 nm). The electrical measurement shows that the electrical conductivity of preoared films was from (5.9×10 –4 ) to (13.8 × 10 –4 ) (Ω cm) -1 . From Hall measurements the deposited films show n-type conductivity. In order to make the CdS/Si junction a viable option for creating an effective photodiode.