Bottom‐Up Growth of n‐Type Polymer Monolayers for High‐Performance Complementary Integrated Circuits (Adv. Electron. Mater. 5/2023)

Monolayer Transistors In article number 2201307 by Chunhui Duan, Mengmeng Li, and co-workers, the solution-state supramolecular assembly of two naphthalene diimide-based conjugated polymers is precisely tuned, so that the controllable growth of ≈2.5 nm-thick monolayers with well-defined fibrillar morphology is achieved. The resultant monolayer transistors, with the electron mobility up to 0.25 cm2 V–1 s–1, allow the first demonstration of a polymer monolayer complementary inverter, where a record-high gain of 113 is reported.