Chemical-vapor-deposited 2D VSe₂ nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

Lun Zhong,Wanxuan Xie,Jinxiang Yin,Wenjing Jie

Journal of Materials Chemistry C（2023）

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摘要

Reliable threshold switching behaviors can be observed in VSe 2 nanosheets after an annealing method owing to the phase transition from the 1T to 2H. The VSe 2 memristor can be employed to perform Boolean logic calculations and simulate LIF functions.

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关键词

nanosheet,boolean logic calculations,2d vse<sub>2</sub>,chemical-vapor-deposited,integrate-and-fire

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Chemical-vapor-deposited 2D VSe2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

Chemical-vapor-deposited 2D VSe₂ nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions