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Growth of CdZnTe (2 1 1) epilayers on GaAs by close spaced sublimation as an alternative substrate for HgCdTe growth

Infrared Physics & Technology(2023)

Cited 2|Views6
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Abstract
•CdZnTe (211)/GaAs epitaxial films were prepared by Close Spaced Sublimation.•The effect of temperature on the crystalline quality of CdZnTe films has been investigated.•CdZnTe films with a low dislocation density were obtained.
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Key words
Infrared materials,HgCdTe,Alternative substrates,CdZnTe film,Close spaced sublimation
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