51‐3: Copper Thin Film Dry Etching Equipment via ECR Plasma Source

This paper presents Gen. 2 (370 mm * 470 mm) size thin copper film dry etching performance that is etched by high electron temperature plasma source with low temperature substrate. Dry etching is performed using HCl gas in a reactive ion etching mode. In addition, scanning low temperature susceptor and the electron cyclotron resonance (ECR) plasma produced by rectangular‐type microwave slot antenna (ReSLAN) are used.