Selective Dual‐Ion Modulation in Solid‐State Magnetoelectric Heterojunctions for In‐Memory Encryption (Small 16/2023)

Xiaoyu Ye,Xi Zhu,Huali Yang,Jipeng Duan,Shuang Gao,Cui Sun,Xuerong Liu,Run‐Wei Li

Small（2023）

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摘要

Magnetoelectric Multifunctional Nanodevices In article number 2206824, Run-Wei Li, Xiaojian Zhu, and co-workers demonstrate the selective dual-ion manipulation in a Pt/HfO2−x/NiOy/Ni magnetoelectric nanodevice and the reconfiguration of its magnetoresistance. A proof-of-concept magnetoelectric device with integrated memory and encryption functionality is designed for the secure storage of information.

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