In-plane electric field induced shift of spin-dependent resistivity at transitions between quantum Hall plateaus in InAs-based quantum well

The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasi-ballistic and zero-field to quantum Hall regime. In-plane gates and Hall-bars have been fabricated from an InGaAs/InAlAs/InAs quantum well hosting a 2DEG with carrier density of about 6.8$\times$10$^{11}$ cm$^{-2}$, mobility of 1.8$\times$10$^5$ cm$^2$/Vs and an effective mass of 0.042$m_e$ after illumination. Magnetotransport measurements at temperatures down to 50 mK and fields up to 12 T yield a high effective Land\'e-factor of |g$^*$| = 16, enabling the resolution of spin-split subbands at magnetic field of 2.5 T. In the quantum Hall regime, electrostatic control of an effective constriction width enables steering of the reflection and transmission of edge channels, allowing a separation of fully spin-polarized edge channels at filling factors ${\nu}$ = 1 und ${\nu}$ = 2. A change in the orientation of a transverse in-plane electric field in the constriction shifts the transition between Zeeman-split quantum Hall plateaus by ${\Delta}$B $\approx$ 0.1 T and is consistent with an effective magnetic field of B$_{eff}$ $\approx$ 0.13 T by spin-dependent backscattering, indicating a change in the spin-split density of states.