The Breakthrough in Electrical Artificial Skin Through Strain Control in ZnO/Si Films

The zinc oxide (ZnO) sputtered on conventional silicon surface (100) orientation always forms the poly-type film introducing the undesired strain to impact the piezoelectric property of ZnO further. This study demonstrates the highly preferred ZnO on silicon surface (100) orientation through strain control in ZnO/Si films to create the electrical skin with ultra-high sensitivity for sensing the tiny pressure as low as 0.16 kPa compared with previous works. The experimental results of high-resolution X-ray diffraction and d33 meter confirm the high-quality ZnO film with highly preferred orientation and improved piezoelectric properties, respectively. Those achievements also benefit the breakthrough in electrical skin through ZnO/Si films.