Realizing High Thermoelectric Performance of Ag/Al Co‐Doped Polycrystalline SnSe through Band Structure Modification and Hydrogen Reduction (Adv. Electron. Mater. 11/2022)

Doping Optimization In article number 2200577, Nan Xin and co-workers combine two dopants to improve the thermoelectric performance of tin selenide (SnSe). Sliver (Ag) doping both narrows the bandgap and increases the hole concentration. Aluminum (Al) is further used to modify the band structure improving the Seebeck coefficient and introducing defects that reduce thermal conductivity. The figure of merit for Ag0.01Al0.01Sn0.98Se can be up to 1.69 at 823 K.