Pb₂BiS₂I₃ Nanowires for Use in Photodetectors

The multicomponent chalcogenide halides of group V and IV elements have aroused great research interest in photoelectric applications owing to their efficiency, stability, and interesting semiconducting properties. Herein, we used a hot-injection solution approach to synthesize Pb2BiS2I3 nanowires (NWs). The Pb2BiS2I3 NWs show a narrow size distribution, excellent air and thermal stabilities, and strong absorption in the visible-light region. The Pb2BiS2I3 NWs-based photodetectors exhibit excellent photoresponse and stability under different wavelengths of visible-light irradiation. The photodetector device exhibits a ∼100 high current on/off ratio, 0.14 A/W photoresponsivity, and 8.71 × 1011 Jones detectivity under 525 nm laser irradiation. These results suggest that Pb2BiS2I3 is a potential candidate for next-generation multifunctional photoelectric devices.