Development of a scalable small-signal 0.1 µm GaAs-pHEMT-model for amplifier applications
Doklady Tomskogo gosudarstvennogo universiteta sistem upravleniâ i radioèlektroniki(2022)
Abstract
This work deals with the development of a 0.1-µm GaAspHEMT-model for use in EDA applications. The model is constructed using a reference transistor with a total gate width of 635 μm, which showed good accuracy under different DC operation modes in a wide frequency range. The developed model can be used to speed up and reduce the cost of the monolithic microwave integrated circuit amplifiers design in which the pHEMT transistor is the basic active element. In further studies the obtained model will be extended to develop more complex types of models, such as noise and nonlinear ones.
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Key words
small-signal,gaas-phemt-model
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