Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices

To understand the effect of the temperature on the resistive switching effect in TiN/Ti/HfO 2 /Pt metal-insulator-metal devices, current-voltage measurements were carried out in the temperature range of 120K-340K. The obtained results show an increase in the set and reset voltages as the temperature decreases. Morevover, these transitions are more abrupt at low temperatures, which led to fewer intermediate states, thus influencing the multilevel properties of the device.