AlGaN/GaN HEMTs with electric field modulation effect: a comprehensive study
2021 IEEE 14th International Conference on ASIC (ASICON)(2021)
Abstract
In order to optimize the electric field distribution and the corresponding thermal field distribution, electric field modulation effect is applied. A new structure with a partial GaN cap layer(PCL-HEMTs) was proposed. Then, a two-dimensional analytical model for the channel potential and electric field distributions of PCL-HEMTs were developed. Also, the sample of PCL-HEMTs have been successfully manufactured. The room-temperature and high-temperature DC characteristics have been performed. The test results indicate that the breakdown voltage was enhanced and the output saturation current was also increased. Likewise, the degradation of the high-temperature output saturation current was alleviated to some extent, due to the improved thermal field distribution. This comprehensive study of PCL-HEMTs will provide a guideline for other high-voltage GaN-based devices.
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Key words
algan/gan hemts,electric field modulation effect
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