Theory of high performance piezotronic quantum harmonic oscillator under nonuniform strain

Piezotronics and piezo-phototronics are two emerging fields that involve high performance piezoelectric semi-conductor devices. The nonuniform strain can create nonlinear piezopotential even in nonpiezoelectric materials such as silicon. Here, we propose theory of quantum piezotronics under nonuniform strain using a typical example of the interaction between independently trapped charges under nonlinear piezopotential. The trapped-ion motional frequency along the x direction can increase from 4 MHz to 25 MHz, and the electric-field noise can decrease by 15 times under nonuniform strain. This piezotronic harmonic oscillator based on trapping wells not only provides a good understanding of quantum piezotronics but also a guide for developing peizotronic devices for quantum computing.