Memtransistor-like operation of devices made by graphene/h-BN/MoS₂ van der Waals heterostructure

We present the fabrication and characterization of a flash memory device based on a van der Waals (vdW) heterostructure comprising graphene (Gr), hexagonal boron nitride (h-BN), and molybdenum disulfide (MoS2). The device exhibits versatile functionalities and demonstrates memtransistor-like behavior, making it a promising candidate for synaptic devices and neuromorphic computing. The Gr/h-BN/MoS2 heterostructure allows for the manipulation of charge concentration in the floating gate (FG) through control gate voltage (V-BG), resulting in conductance switching. Moreover, the overlap structure of the FG and source-drain electrodes enables memtransistor-like operations, where the writing processes rely on the source-drain voltage (V-DS). By varying carrier storage concentrations in the Gr-FG, multiple memory states can be achieved, offering analog information processing capabilities. In addition, the combination of dual-input functionality allows for the identification of a substantial on/off ratio even when utilizing a lower reading V-DS, consequently strengthening the dependability of the memory state. Our work showcases the great potential of the Gr/h-BN/MoS2 heterostructure for advanced nanoelectronics, providing a platform for the development of computing architectures and neuromorphic systems.