Inkjet-Printed, Wafer-Scale Organic Schottky-Gate Transistors toward Single-Battery-Driven Integrated Logic

Organic field-effect transistors switched by insulated gates are the most essential building blocks, while usually plagued with degraded gate control arising from complicated dielectric engineering. Subsequently, the resulting large supply voltage and power consumption remain an essential issue for portable electronics driven by a single battery of only 1.5 V. Herein, wafer-scale organic Schottky-gate transistor arrays using inkjet-printed few-layer organic semiconducting crystals are reported. The transistors exhibit steep switching characteristics with an average subthreshold swing of 55 mV per dec and high signal amplification efficiency over 45 S A-1, attributed to efficient Schottky gating and enhanced charge injection. Thereafter, high-gain inverters are successfully demonstrated with an ultralow power consumption of only 800 pW; also, they are integrated as 1 V driven sequential logic circuits. A coplanar double-gate geometry is also introduced for low-voltage, single-device AND logic. Therefore, the work opens new avenues toward the sustainable advancement in single-battery-driven, ultralow-power organic electronics. The first demonstration of organic Schottky-gate transistor arrays is shown at a wafer scale using inkjet-printed ultrathin organic crystalline semiconductors. The devices can operate well in the subthreshold region, exhibiting ideal switching characteristics that possess record-breaking subthreshold swing and very high intrinsic gain toward single-battery-driven integrated logic with ultralow power consumption.image