Actively controlled anode auxiliary gate super-junction insulated gate bipolar transistor with extremely low E_off

When dealing with the super-junction insulated gate bipolar transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its V-on-E-off are not exactly the same as for non-SJ IGBTs. In the pursuit of extremely low E-off, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on a 650 V SJ-IGBT to realize a unipolar turn-off as observed in SJ-MOSFETs accompanied by fast switching and extremely low E-off. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results for the proposed AAG-SJ-IGBT indicate a 69% smaller t(doff) and a 54% lower E-off than the FP-SJ-IGBT, and its V-on-E-off is significantly optimized from cathode-improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent V-on-E-off trade-off.