Peculiarities of the two-stage Zn diffusion profile formation from vapor phase into InGaAs/InP heterostructure for avalanche photodiode fabrication

In this paper was presented the research results of the dependence of the InGaAs surface layer thickness on the process of Zn diffusion into InGaAs/InP heterostructures from a diethylzink source. One-dimensional distribution profiles of electrically active dopants were obtained by electrochemical volt-capacitive profiling. The influence of technological parameters (process time, temperature, and pressure in the reactor) on the hole concentration and the depth of the p-type dopant was studied. The principal possibility of simultaneously forming a highly doped InGaAs:Zn layer has been experimentally shown due to the higher Zn solubility limit in InGaAs compared to InP and to implement a two-stage p-type dopant profile in one Zn diffusion process by controlling the thickness of the InGaAs surface layer.