Schottky Diode Based High _{RF - DC} Rectifier Design in 180nm CMOS Process for Far-Field Wireless Power Transfer Applications

This paper presents the design of a highly efficient on-chip rectifier working in the ultra-wideband (UWB) frequency range for far-field wireless power transfer (WPT) applications. A single stage voltage doubler rectifier circuit has been designed in the standard 180nm CMOS process using schottky diodes. An analytical model has been developed to characterize the diode by obtaining its equivalent circuit model to improve the power conversion efficiency (PCE) of the rectifier circuit. From the measured results, it is evident that the proposed rectifier achieves multi-band frequency of operation within the 3 - 8 GHz UWB frequency range with a 500 MHz bandwidth between the 5.46 - 5.96 GHz frequency range. The rectifier is able to achieve a high PCE of 72% for an input power of 10 dBm at the 5 GHz frequency and is able to yield an output voltage of 2.68 V at that same frequency point.