Heteroepitaxial Growth of Thick -Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

In this study, halide vapor phase epitaxy with flow modulation epitaxy (FME) was used to grow a 10 mu m thick single-crystalline alpha-Ga2O3 epilayer on a sapphire substrate. By optimizing the interval time of the gas, highly crystalline thick alpha-Ga2O3 epitaxial layers can be grown without any cracks. The as-grown alpha-Ga2O3 was evaluated using scanning electron microscopy and atomic force microscopy to analyze the improvement in the surface morphology and roughness of the epitaxial layer, while X-ray diffraction was used to evaluate the crystallinity. Under optimized O-2 FME conditions, the thick alpha-Ga2O3 film exhibited a lower full width at half-maximum (fwhm) of 779 arcsec for the (1014) plane compared to the (1014) plane fwhm values of 1137 and 925 arcsec obtained for the reference and HCl FME conditions, respectively. The results indicated that the alpha-Ga2O3 epitaxial layer grown under the O-2 FME conditions exhibited the best quality. This confirms that the current approach to growing high-quality alpha-Ga2O3 thick films is stable.