Improvement of Negative Bias Stress Stability in Mg<sub>0.03</sub>Zn<sub>0.97</sub>O Thin-Film Transistors
IEEE Electron Device Letters(2015)
Abstract
A small amount of Mg is introduced into ZnO to form the ternary compound Mg 0.03 Zn 0.97 O (MZO), which serves as the channel layer of thin-film transistors (TFTs). The MZO TFT shows smaller subthreshold swing of 0.57 V/decade and much better negative bias stress (NBS) stability, which shifts only by -1.21 V in the threshold voltage over its ZnO TFT counterpart (subthreshold swing of 0.79 V/decade; -3.56 V shifts in the threshold voltage after NBS). The superior stability against NBS is mainly attributed to the reduction of donor-like defects associated with ionized oxygen vacancies in the MZO TFT channel.
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Key words
negative bias stress stability,mg<,sub>,003<,/sub>,zn<,sub>,097<,/sub>,o,thin-film thin-film
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