An a-IGZO TFT-Based AMOLED Pixel Circuit Employing Stable Mobility Compensation Suppressing Degradation of Detected V_TH

In this paper, we propose a new active-matrix organic light-emitting diode (AMOLED) pixel circuit using amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). The proposed pixel circuit consists of seven TFTs and two capacitors, compensating for both threshold voltage (V-TH)and mobility variations. The simulation results show that the proposed pixel circuit can successfully compensate for mobility variation. Also, the mobility compensation stage positively affects a significant V-TH fluctuation. The proposed circuit is fabricated within an area of 19.95 mu mx39.9 mu m that can achieve 635 pixels per inch (PPI), and the experimental results show relatively consistent current level seven under severe TFT variations.