Gate-voltage switching of nonreciprocal transport in oxide-based Rashba interfaces

Rashba interfaces enable spin-charge interconversion via the direct and inverse Edelstein effects, and so may be used to replace ferromagnets as efficient sources and detectors of spin. However, the direction of spins generated by a ferromagnet can be easily switched, while that of spins generated by a Rashba system is usually fixed, being set by its electronic structure. This study shows that in SrTiO${}_{3}$-based Rashba interfaces, where multiple electronic bands contribute differently to charge-spin conversion, the application of gate voltage enables a sign change of the charge-spin conversion effect. This offers possibilities for innovative spin-based logic devices.