Correction: Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction

Nanoscale(2022)

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摘要
Correction for ‘Strain mapping inside an individual processed vertical nanowire transistor using scanning X-ray nanodiffraction’ by Dmitry Dzhigaev et al. , Nanoscale , 2020, 12 , 14487–14493, DOI: 10.1039/D0NR02260H.
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关键词
vertical nanowire transistor,strain mapping,x-ray
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