Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs
IEICE Technical Report; IEICE Tech. Rep.（2009）
关键词
threshold voltage variability,dopant profile,gate-ler-induced
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要