Thermoelectric Power-Generation Characteristics of a Thin-Film Device Processed by the Flip-Chip Bonding of Bi₂Te₃ and Sb₂Te₃ Thin-Film Legs Using an Anisotropic Conductive Adhesive

A thermoelectric thin-film device with a cross-plane configuration was fabricated by the flip-chip process using an anisotropic conductive adhesive. The Cu/Au bumps on the top substrate were flip-chip bonded to the 242 pairs of the n-type Bi2Te3 and p-type Sb2Te3 thin-film legs electrodeposited on the bottom substrate. The internal resistance of the thin-film device was 59 Ω, most of which can be attributed to the interfacial resistance of the 484 flip-chip joints. The thin-film device exhibited an open-circuit voltage of 382 mV and a maximum output power of 652 µW for a temperature difference of 36.8 K applied across its top and bottom substrates.