Actively controlled anode auxillary gate Superjunction IGBT with extremely low E _off

Abstract The Super-junction Insulated Gate Bipolar Transistor (SJ-IGBT), due to its unipolar/bipolar mixed conduction mechanism, the approaches to improve its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ are not exactly the same as non-SJ IGBTs. For the pursue of extremely low $\textit{E}_\textbf{off}$, a planar auxiliary anode gate SJ-IGBT (AAG-SJ-IGBT) is proposed based on 650V SJ-IGBT to realize a unipolar turn-off as SJ-MOSFETs accompanied with fast switching and extremely low $\textit{E}_\textbf{off}$. The planar auxiliary anode gate provides similar effects but better feasibility than conventional trench ones. Sentaurus TCAD simulation results of the proposed AAG-SJ-IGBT indicates the -69\% smaller $\textit{t}_\textbf{doff}$ and -54\% lower $\textit{E}_\textbf{off}$ than the FP-SJ-IGBT, and its $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ is significantly optimized from cathode improved SJ-IGBTs. The analysis of carrier and current density reveals the static and dynamic characteristics of the AAG-SJ-IGBT and the principle for excellent $\textit{V}_\textbf{on}$-$\textit{E}_\textbf{off}$ Trade-off.